1、第 42 卷第 4 期2023 年 8 月红 外 与 毫 米 波 学 报J.Infrared Millim.WavesVol.42，No.4August，2023文章编号：1001-9014（2023）04-0483-07DOI：10.11972/j.issn.1001-9014.2023.04.009High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applicationsCHEN Xiao-Juan1，2*，ZHANG Yi-Chuan2，ZHANG Shen2，L
2、I Yan-Kui2，NIU Jie-Bin2，HUANG Sen2，MA Xiao-Hua1，ZHANG Jin-Cheng1，WEI Ke2*（1.Xidian University，Xian 710071，China；2.Institute of Microelectronics，Chinese Academy of Sciences，Beijing 100029，China）Abstract：In this work，high-efficiency AlN/GaN metal-insulator-semiconductor high electron mobility transist
3、ors（MIS-HEMTs）have been fabricated for millimeter wave applications.A 5-nm SiNx insulator is grown in-situ as the gate insulator by metal-organic chemical vapor deposition（MOCVD），contributing to remarkably suppressed gate leakage，interface state density and current collapse.The fabricated MIS-HEMTs
4、exhibit a maximum drain current of 2.2 A/mm at VGS=2 V，an extrinsic peak Gm of 509 mS/mm，and a reverse Schottky gate leakage current of 4.710-6 A/mm when VGS=-30 V.Based on a 0.15 m T-shaped gate technology，an fT of 98 GHz and fMAX of 165 GHz were obtained on the SiN/AlN/GaN MIS-HEMTs.Large signal m
5、easurement shows that，in a continuous-wave mode，the MIS-HEMTs deliver an output power density（Pout）of 2.3 W/mm associated with a power-added efficiency（PAE）of 45.2%at 40 GHz，and a Pout（PAE）of 5.2 W/mm（42.2%）when VDS was further increased to 15 V.Key words：AlN/GaN，metal-insulator-semiconductor High E
6、lectron Mobility Transistors（MIS-HEMTs），millimeter wave，low dispersion，low drain voltage带有原位生长SiNx绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件陈晓娟1，2*，张一川2，张昇2，李艳奎2，牛洁斌2，黄森2，马晓华1，张进成1，魏珂2*（1.西安电子科技大学，陕西 西安 710071；2.中国科学院微电子研究所，北京 100029）摘要：本文采用金属有机化学气相沉积（MOCVD）生长原位SiNx栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管（MIS
7、-HEMTs）。原位生长SiNx栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍塌。所研制的MIS HEMTs在VGS=2 V时最大饱和输出电流为2.2 A/mm，峰值跨导为509 mS/mm，在VGS=-30 V时肖特基栅漏电流为4.710-6 A/mm。采用0.15 mT形栅技术，获得98 GHz的fT和165 GHz的fMAX。大信号测量表明，在连续波模式下，漏极电压VDS=8 V时，MIS HEMT在40 GHz下输出功率密度2.3 W/mm，45.2%的功率附加效率（PAE），而当VDS增加到15 V时，功率密度提升到5.2 W/mm，PAE为42.2%。关键词：AlN/
8、GaN；金属绝缘体半导体高电子迁移率晶体管；Ka波段；低损耗；低偏压中图分类号：O48 文献标识码：AIntroductionReceived date：2022 06 22，revised date：2022 11 02 收稿日期：2022 06 22，修回日期：2022 11 02Foundation items：Supported by the National Natural Science Foundation of China（61822407，62074161，62004213）；the National Key Research and Development Program
9、of China under（2018YFE0125700）Biography：CHEN Xiao-Juan（1979-），female，ChongQing，master.Research area involves Compound Semiconductor materials and devices.E-mail：.*Corresponding authors：E-mail：，红 外 与 毫 米 波 学 报42 卷In recent years，high electron mobility transistors（HEMTs）based on GaN have attracted mor
10、e attention，due to their high thermal conductivity，high breakdown voltage，and high-power density for millimeter-wave（mm-wave）power amplifiers.In an AlGaN/GaN HEMTs structure，the working voltage may reach 28 V or even higher1 2，such high voltage will enhance the longitudinal electric field to increas
11、e the gate leakage3.Additionally，the internal electric field intensity will reach 106107 V/cm when the 2030 V is applied to drain bias，leading to current collapse，reduction of breakdown voltage，and increase in leakage4.In order to achieve high-performance GaN HEMT at low operating voltage，the energy
12、-band theory is used to design new epitaxial structures to increase the electron gas density meanwhile preventing the gate from losing its control ability for the short T-gate.Therefore，the ultra-thin barrier layer technology has shown great advantages in ultra-high frequency and high power5 6.In mi
13、llimeter-wave applications，the gate length is shrunk to deep-submicron size，and the transverse dimension of the device needs to be scaled down at the same proportion.To avoid the short channel effect，the material structure with an ultra-thin barrier layer is used to solve the aspect ratio of the gat
14、e.The issue primarily results from the much stronger spontaneous and piezoelectric polarization of AlN/GaN compared to AlGaN/GaN，leading to a much higher drain current in the HEMT channel，also allowing the use of a much thinner barrier layer.While along with the shrink of vertical device dimensions，
15、increased gate leakage necessitates the use of a gate insulator7-10.AlN barrier has been shown highly sensitive to the air and vapor for oxidation，consequently，surface treatment and passivation techniques play a significant role in the surface state.To achieve a low gate leakage current，materials wi
16、th a wide bandgap are necessary，such as SiO2 and Al2O37 9.However，it is inevitable that these materials are deposited on the AlN surface when it is exposed to air，becoming contamination at the interfaces.On the other hand，in-situ deposition of SiNx is a promising way to realize proper interfaces，which guarantees the insensitivity of AlN surfaces to temperature change.In this work，we demonstrated the AlN/GaN MIS-HEMTs.By using in-situ SiNx insulator，a maximum drain current ID，max of 2.2 A/mm was
