1、 ANALYSIS AND DESIGNOF ANALOG INTEGRATEDCIRCUITSFifth EditionPAUL R.GRAYUniversity of California,BerkeleyPAUL J.HURSTUniversity of California,DavisSTEPHEN H.LEWISUniversity of California,DavisROBERT G.MEYERUniversity of California,BerkeleyNew York/Chichester/Weinheim/Brisbane/Singapore/TorontoPUBLIS
2、HERDon FowleyACQUISITIONS EDITORDaniel SayreSENIOR PRODUCTION EDITORValerieA.VargasEXECUTIVE MARKETING MANAGERChristopher RuelDESIGNERArthur MedinaPRODUCTION MANAGEMENT SERVICESElm Street Publishing ServicesEDITORIALASSISTANTCarolyn WeismanMEDIAEDITORLauren SapiraCover courtesy of Chi Ho Law.This bo
3、ok was set in 10/12 Times Roman by Thomson Digital and printed and bound byHamilton Printing Company.The cover was printed by Phoenix Color,Inc.This book was printed on acid-free paper.?Copyright 2009 John Wiley&Sons,Inc.All rights reserved.No part of this publication may be reproduced,stored in a r
4、etrieval system or transmittedin any form or by any means,electronic,mechanical,photocopying,recording,scanningor otherwise,except as permitted under Sections 107 or 108 of the 1976 United StatesCopyrightAct,without either the prior written permission of the Publisher,orauthorization through payment
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6、ite http:/ orderbooks or for customer service please call 1-800-CALL-WILEY(255-5945).http:/ of Congress Cataloging-in-Publication DataAnalysis and design of analog integrated circuits/Paul R.Gray.et al.5th ed.p.cm.Includes bibliographical references and index.ISBN 978-0-470-24599-6(cloth:alk.paper)1
7、.Linear integrated circuits-Computer-aided design.2.Metal oxidesemiconductors-Computer-aided design.3.Bipolar transistors-Computer-aided design.I.Gray,Paul R.,1942-TK7874.A588 2009621.3815dc2108-043583Printed in the United States ofAmerica10 9 8 7 6 5 3 2 1To Liz,Barbara,Robin,and JudyPrefaceSince t
8、he publication of the first edition of this book,the field of analog integrated circuits hasdeveloped and matured.The initial groundwork was laid in bipolar technology,followed bya rapid evolution of MOS analog integrated circuits.Thirty years ago,CMOS technologieswere fast enough to support applica
9、tions only at audio frequencies.However,the continu-ing reduction of the minimum feature size in integrated-circuit(IC)technologies has greatlyincreased the maximum operating frequencies,and CMOS technologies have become fastenough for many new applications as a result.For example,the bandwidth in s
10、ome videoapplications is about 4 MHz,requiring bipolar technologies as recently as about twenty-threeyears ago.Now,however,CMOS easily can accommodate the required bandwidth for videoandisbeingusedforradio-frequencyapplications.Today,bipolarintegratedcircuitsareusedinsomeapplicationsthatrequireveryl
11、ownoise,verywidebandwidth,ordrivinglow-impedanceloads.In this fifth edition,coverage of the bipolar 741 op amp has been replaced with a low-voltage bipolar op amp,the NE5234,with rail-to-rail common-mode input range and almostrail-to-rail output swing.Analysis of a fully differential CMOS folded-cas
12、code operationalamplifier(op amp)is now included in Chapter 12.The 560B phase-locked loop,which is nolonger commercially available,has been deleted from Chapter 10.The SPICE computer analysis program is now readily available to virtually all electricalengineering students and professionals,and we ha
13、ve included extensive use of SPICE in thisedition,particularly as an integral part of many problems.We have used computer analysis asit is most commonly employed in the engineering design processboth as a more accuratecheck on hand calculations,and also as a tool to examine complex circuit behavior
14、beyond thescope of hand analysis.An in-depth look at SPICE as an indispensable tool for IC robust design can be found inThe SPICE Book,2nd ed.,published by J.Wiley and Sons.This text contains many workedout circuit designs and verification examples linked to the multitude of analyses available inthe
15、 most popular versions of SPICE.The SPICE Book conveys the role of simulation as anintegralpartofthedesignprocess,butnotasareplacementforsolidcircuit-designknowledge.This book is intended to be useful both as a text for students and as a reference book forpracticingengineers.Forclassuse,eachchapteri
16、ncludesmanyworkedproblems;theproblemsets at the end of each chapter illustrate the practical applications of the material in the text.Allof the authors have extensive industrial experience in IC design and in the teaching of courseson this subject;this experience is reflected in the choice of text m
17、aterial and in the problemsets.AlthoughthisbookisconcernedlargelywiththeanalysisanddesignofICs,aconsiderableamount of material also is included on applications.In practice,these two subjects are closelylinked,and a knowledge of both is essential for designers and users of ICs.The latter composethe l
18、arger group by far,and we believe that a working knowledge of IC design is a greatadvantagetoanICuser.Thisisparticularlyapparentwhentheusermustchoosefromamonganumber of competing designs to satisfy a particular need.An understanding of the IC structureis then useful in evaluating the relative desira
19、bility of the different designs under extremes ofenvironment or in the presence of variations in supply voltage.In addition,the IC user is in aivPrefacevmuch better position to interpret a manufacturers data if he or she has a working knowledgeof the internal operation of the integrated circuit.The
20、contents of this book stem largely from courses on analog integrated circuits given atthe University of California at the Berkeley and Davis campuses.The courses are senior-levelelectives and first-year graduate courses.The book is structured so that it can be used as thebasic text for a sequence of
21、 such courses.The more advanced material is found at the end ofeach chapter or in an appendix so that a first course in analog integrated circuits can omit thismaterial without loss of continuity.An outline of each chapter is given below with suggestionsfor material to be covered in such a first cou
22、rse.It is assumed that the course consists of threehours of lecture per week over a fifteen-week semester and that the students have a workingknowledge of Laplace transforms and frequency-domain circuit analysis.It is also assumedthat the students have had an introductory course in electronics so th
23、at they are familiar withtheprinciplesoftransistoroperationandwiththefunctioningofsimpleanalogcircuits.Unlessotherwise stated,each chapter requires three to four lecture hours to cover.Chapter 1 contains a summary of bipolar transistor and MOS transistor device physics.We suggest spending one week o
24、n selected topics from this chapter,with the choice of topicsdependingonthebackgroundofthestudents.ThematerialofChapters1and2isquiteimportantin IC design because there is significant interaction between circuit and device design,as willbe seen in later chapters.A thorough understanding of the influe
25、nce of device fabrication ondevice characteristics is essential.Chapter 2 is concerned with the technology of IC fabrication and is largely descriptive.One lecture on this material should suffice if the students are assigned the chapter to read.Chapter3dealswiththecharacteristicsofelementarytransist
26、orconnections.Thematerialonone-transistoramplifiersshouldbeareviewforstudentsattheseniorandgraduatelevelsandcan be assigned as reading.The section on two-transistor amplifiers can be covered in aboutthree hours,with greatest emphasis on differential pairs.The material on device mismatcheffects in di
27、fferential amplifiers can be covered to the extent that time allows.InChapter4,theimportanttopicsofcurrentmirrorsandactiveloadsareconsidered.Theseconfigurations are basic building blocks in modern analog IC design,and this material shouldbe covered in full,with the exception of the material on band-
28、gap references and the materialin the appendices.Chapter5isconcernedwithoutputstagesandmethodsofdeliveringoutputpowertoaload.Integrated-circuit realizations of Class A,Class B,and Class AB output stages are described,as well as methods of output-stage protection.A selection of topics from this chapt
29、er shouldbe covered.Chapter 6 deals with the design of operational amplifiers(op amps).Illustrative examplesof dc and ac analysis in both MOS and bipolar op amps are performed in detail,and the limita-tions of the basic op amps are described.The design of op amps with improved characteristicsin both
30、 MOS and bipolar technologies are considered.This key chapter on amplifier designrequires at least six hours.In Chapter 7,the frequency response of amplifiers is considered.The zero-value time-constanttechniqueisintroducedforthecalculationsofthe3-dBfrequencyofcomplexcircuits.The material of this cha
31、pter should be considered in full.Chapter 8 describes the analysis of feedback circuits.Two different types of analysis arepresented:two-port and return-ratio analyses.Either approach should be covered in full withthe section on voltage regulators assigned as reading.Chapter 9 deals with the frequen
32、cy response and stability of feedback circuits and shouldbe covered up to the section on root locus.Time may not permit a detailed discussion of rootlocus,but some introduction to this topic can be given.viPrefaceIn a fifteen-week semester,coverage of the above material leaves about two weeks forCha
33、pters 10,11,and 12.A selection of topics from these chapters can be chosen as follows.Chapter 10 deals with nonlinear analog circuits and portions of this chapter up to Section10.2 could be covered in a first course.Chapter 11 is a comprehensive treatment of noisein integrated circuits and material
34、up to and including Section 11.4 is suitable.Chapter 12describes fully differential operational amplifiers and common-mode feedback and may bebest suited for a second course.We are grateful to the following colleagues for their suggestions for and/or evaluation ofthis book:R.Jacob Baker,Bernhard E.B
35、oser,A.Paul Brokaw,Iwen Chao,John N.Churchill,David W.Cline,Kenneth C.Dyer,Ozan E.Erdo gan,John W.Fattaruso,Weinan Gao,EdwinW.Greeneich,Alex Gros-Balthazard,T unde Gyurics,Ward J.Helms,Kaveh Hosseini,Tim-othy H.Hu,Shafiq M.Jamal,John P.Keane,Haideh Khorramabadi,Pak Kim Lau,ThomasW.Matthews,Krishnasw
36、amy Nagaraj,Khalil Najafi,Borivoje Nikoli c,Keith ODonoghue,Robert A.Pease,Lawrence T.Pileggi,Edgar S anchez-Sinencio,Bang-Sup Song,Richard R.Spencer,Eric J.Swanson,AndrewY.J.Szeto,Yannis P.Tsividis,Srikanth Vaidianathan,T.R.Viswanathan,Chorng-KuangWang,DongWang,and Mo Maggie Zhang.We are also grate
37、fulto DarrelAkers,Mu Jane Lee,Lakshmi Rao,Nattapol Sitthimahachaikul,Haoyue Wang,andMoMaggieZhangforhelpwithproofreading,andtoChiHoLawforallowingustouseonthecover of this book a die photograph of an integrated circuit he designed.Finally,we would liketo thank the staffs at Wiley and Elm Street Publi
38、shing Services for their efforts in producingthis edition.The material in this book has been greatly influenced by our association with the lateDonald O.Pederson,and we acknowledge his contributions.Berkeley and Davis,CA,2008Paul R.GrayPaul J.HurstStephen H.LewisRobert G.MeyerContentsCHAPTER 1Models
39、 for Integrated-Circuit ActiveDevices11.1Introduction11.2Depletion Region of a pn Junction11.2.1Depletion-Region Capacitance51.2.2Junction Breakdown61.3Large-Signal Behavior of BipolarTransistors81.3.1Large-Signal Models in theForward-Active Region81.3.2Effects of Collector Voltage onLarge-Signal Ch
40、aracteristics in theForward-Active Region141.3.3Saturation and Inverse-ActiveRegions161.3.4Transistor Breakdown Voltages201.3.5Dependence of Transistor CurrentGain Fon Operating Conditions231.4Small-Signal Models of BipolarTransistors251.4.1Transconductance261.4.2Base-Charging Capacitance271.4.3Inpu
41、t Resistance281.4.4Output Resistance291.4.5Basic Small-Signal Model of theBipolar Transistor301.4.6Collector-Base Resistance301.4.7Parasitic Elements in theSmall-Signal Model311.4.8Specification of TransistorFrequency Response341.5Large-Signal Behavior ofMetal-Oxide-SemiconductorField-Effect Transis
42、tors381.5.1Transfer Characteristics of MOSDevices381.5.2Comparison of Operating Regions ofBipolar and MOS Transistors451.5.3Decomposition of Gate-SourceVoltage471.5.4Threshold TemperatureDependence471.5.5MOS Device Voltage Limitations481.6Small-Signal Models of MOSTransistors491.6.1Transconductance5
43、01.6.2Intrinsic Gate-Source andGate-Drain Capacitance511.6.3Input Resistance521.6.4Output Resistance521.6.5Basic Small-Signal Model of theMOS Transistor521.6.6Body Transconductance531.6.7Parasitic Elements in theSmall-Signal Model541.6.8MOS Transistor FrequencyResponse551.7Short-Channel Effects in M
44、OSTransistors591.7.1Velocity Saturation from theHorizontal Field591.7.2Transconductance and TransitionFrequency631.7.3Mobility Degradation from theVertical Field651.8Weak Inversion in MOS Transistors651.8.1Drain Current in Weak Inversion661.8.2Transconductance and TransitionFrequency in Weak Inversi
45、on691.9Substrate Current Flow in MOSTransistors71A.1.1 Summary ofActive-DeviceParameters73viiviiiContentsCHAPTER 2Bipolar,MOS,and BiCMOSIntegrated-Circuit Technology782.1Introduction782.2Basic Processes in Integrated-CircuitFabrication792.2.1Electrical Resistivity of Silicon792.2.2Solid-State Diffus
46、ion802.2.3Electrical Properties of DiffusedLayers822.2.4Photolithography842.2.5Epitaxial Growth862.2.6Ion Implantation872.2.7Local Oxidation872.2.8Polysilicon Deposition872.3High-Voltage BipolarIntegrated-Circuit Fabrication882.4Advanced Bipolar Integrated-CircuitFabrication922.5Active Devices in Bi
47、polarAnalogIntegrated Circuits952.5.1Integrated-Circuit npn Transistors962.5.2Integrated-Circuit pnp Transistors1072.6Passive Components in BipolarIntegrated Circuits1152.6.1Diffused Resistors1152.6.2Epitaxial and Epitaxial PinchResistors1192.6.3Integrated-Circuit Capacitors1202.6.4Zener Diodes1212.
48、6.5Junction Diodes1222.7Modifications to the Basic BipolarProcess1232.7.1Dielectric Isolation1232.7.2Compatible Processing forHigh-PerformanceActive Devices1242.7.3High-Performance PassiveComponents1272.8MOS Integrated-Circuit Fabrication1272.9Active Devices in MOS IntegratedCircuits1312.9.1n-Channe
49、l Transistors1312.9.2p-Channel Transistors1442.9.3Depletion Devices1442.9.4Bipolar Transistors1452.10Passive Components in MOSTechnology1462.10.1 Resistors1462.10.2 Capacitors in MOS Technology1482.10.3 Latchup in CMOS Technology1512.11BiCMOS Technology1522.12Heterojunction Bipolar Transistors1532.1
50、3Interconnect Delay1562.14Economics of Integrated-CircuitFabrication1562.14.1 Yield Considerations inIntegrated-Circuit Fabrication1572.14.2 Cost Considerations inIntegrated-Circuit Fabrication159A.2.1 SPICE Model-Parameter Files162CHAPTER 3Single-Transistor and Multiple-TransistorAmplifiers1693.1De
