1、Designation:E116211Standard Practice forReporting Sputter Depth Profile Data in Secondary Ion MassSpectrometry(SIMS)1This standard is issued under the fixed designation E1162;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year o
2、f last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 This practice covers the information needed to describeand report instrumentation,specimen parameters,experimentalconditi
3、ons,and data reduction procedures.SIMS sputter depthprofiles can be obtained using a wide variety of primary beamexcitation conditions,mass analysis,data acquisition,andprocessing techniques(1-4).21.2 LimitationsThis practice is limited to conventionalsputter depth profiles in which information is a
4、veraged over theanalyzed area in the plane of the specimen.Ion microprobe ormicroscope techniques permitting lateral spatial resolution ofsecondary ions within the analyzed area,for example,imagedepth profiling,are excluded.1.3 The values stated in SI units are to be regarded asstandard.No other uni
5、ts of measurement are included in thisstandard.1.4 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulat
6、ory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:3E673 Terminology Relating to Surface Analysis(Withdrawn2012)43.Terminology3.1 For definitions of terms used in this practice,seeTerminology E673.4.Summary of Practice4.1 Experimental conditions and variables that affect SIMSsputt
7、er depth profiles(1-4)and tabulated raw data(wherefeasible)are reported to facilitate comparisons to other labo-ratories or specimens,and to results of other analytical tech-niques.5.Significance and Use5.1 This practice is used for reporting the experimentalconditions as specified in Section 6 in t
8、he“Methods”or“Experimental”sections of other publications(subject toeditorial restrictions).5.2 The report would include specific conditions for eachdata set,particularly,if any parameters are changed fordifferent sputter depth profile data sets in a publication.Forexample,footnotes of tables or fig
9、ure captions would be usedto specify differing conditions.6.Information to Be Reported6.1 Instrumentation:6.1.1 If a standard commercial SIMS system is used,specifythe manufacturer and instrument model number and type ofanalyzer,such as,magnetic sector,quadrupole,time-of-flight,and so forth.Specify,
10、the model numbers and manufacturer ofany accessory or auxiliary equipment relevant to the depthprofiling study(for example,special specimen stage,primarymass filter,primary ion source,electron flood gun,vacuumpumps,data acquisition system,and source of software,etc.).6.1.2 If a nonstandard commercia
11、l SIMS system is used,specify the manufacturer and model numbers of components(for example,primary ion source,mass analyzer,data system,and accessory equipment).6.2 Specimen:6.2.1 Describe the specimen as completely as possible.Forexample,specify its bulk composition,preanalysis history,physical dim
12、ensions.If the specimen contains dopants,forexample,semiconductors,report the dopant type and concen-tration.For multicomponent specimens,state the degree ofspecimen homogeneity.Describe any known contaminants.6.2.2 State the method of mounting and positioning thespecimen for analysis.Specify any ph
13、ysical treatment of thespecimen mounted in the SIMS analysis chamber(for example,1This practice is under the jurisdiction of ASTM Committee E42 on SurfaceAnalysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.Current edition approved Nov.1,2011.Published December 2011.Originallyappr
14、oved in 1987.Last previous edition approved in 2006 as E1162 06.DOI:10.1520/E1162-11.2The boldface numbers in parentheses refer to the references at the end of thisstandard.3For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annua
15、l Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.4The last approved version of this historical standard is referenced onwww.astm.org.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1
16、 heated,cooled,electron bombarded,and so forth).Note thespecimen potential relative to ground.Describe the method ofspecimen charge compensation used(if any),for example,conductive coatings or grid,electron flooding,etc.6.3 Experimental Conditions:6.3.1 Primary Ion SourceGive the following parameterswhenever possible:Composition of beam(if mass filtered,givethe specific ion and isotope,for example,16O);angle ofincidence(relative to the surface normal);ion beam energy;charge state and polarity;cu
