1、Designation:E112708(Reapproved 2015)Standard Guide forDepth Profiling in Auger Electron Spectroscopy1This standard is issued under the fixed designation E1127;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.
2、A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 This guide covers procedures used for depth profiling inAuger electron spectroscopy.1.2 Guidelines are given for depth profiling by the f
3、ollow-ing:SectionIon Sputtering6Angle Lapping and Cross-Sectioning7Mechanical Cratering8Mesh Replica Method9Nondestructive Depth Profiling101.3 The values stated in SI units are to be regarded asstandard.No other units of measurement are included in thisstandard.1.4 This standard does not purport to
4、 address all of thesafety problems,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:2E673 Terminol
5、ogy Relating to Surface Analysis(Withdrawn2012)3E684 Practice for Approximate Determination of CurrentDensity of Large-Diameter Ion Beams for Sputter DepthProfiling of Solid Surfaces(Withdrawn 2012)3E827 Practice for Identifying Elements by the Peaks inAuger Electron SpectroscopyE996 Practice for Re
6、porting Data in Auger Electron Spec-troscopy and X-ray Photoelectron SpectroscopyE1078 Guide for Specimen Preparation and Mounting inSurface AnalysisE1577 Guide for Reporting of Ion Beam Parameters Used inSurface AnalysisE1634 Guide for Performing Sputter Crater Depth Measure-mentsE1636 Practice for
7、 Analytically Describing Depth-Profileand Linescan-Profile Data by an Extended Logistic Func-tionE1829 Guide for Handling Specimens Prior to SurfaceAnalysis2.2 ISO Standard:4ISO/TR 22335:2007 Surface Chemical AnalysisDepthProfilingMeasurement of Sputtering Rate:Mesh-Replica Method Using a Mechanical
8、 Stylus Profilometer3.Terminology3.1 Definitions:3.1.1 For definitions of terms used in this guide,refer toTerminology E673.4.Summary of Guide4.1 In ion sputtering,the surface layers are removed by ionbombardment in conjunction with Auger analysis.4.2 In angle lapping,the surface is lapped or polish
9、ed at asmall angle to improve the depth resolution as compared to across section.4.3 In mechanical cratering,a spherical or cylindrical crateris created in the surface using a rotating ball or wheel.Thesloping sides of the crater are used to improve the depthresolution as in angle lapping.4.4 In non
10、destructive techniques,different methods of vary-ing the electron information depth are involved.5.Significance and Use5.1 Auger electron spectroscopy yields information con-cerning the chemical and physical state of a solid surface in thenear surface region.Nondestructive depth profiling is limited
11、to this near surface region.Techniques for measuring the craterdepths and film thicknesses are given in(1).51This guide is under the jurisdiction of ASTM Committee E42 on SurfaceAnalysisand is the direct responsibility of Subcommittee E42.03 on Auger ElectronSpectroscopy and X-Ray Photoelectron Spec
12、troscopy.Current edition approved June 1,2015.Published June 2015.Originallyapproved in 1986.Last previous edition approved in 2008 as E1127 08.DOI:10.1520/E1127-08R15.2For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Boo
13、k of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.3The last approved version of this historical standard is referenced onwww.astm.org.4Available from International Organization for Standardization(ISO),1,ch.dela Voie-Creuse,CP 56,CH-1211 Geneva 20,
14、Switzerland,http:/www.iso.org.5The boldface numbers in parentheses refer to a list of references at the end ofthis standard.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 5.2 Ion sputtering is primarily used for depths of less thanthe or
15、der of 1 m.5.3 Angle lapping or mechanical cratering is primarily usedfor depths greater than the order of 1 m.5.4 The choice of depth profiling methods for investigatingan interface depends on surface roughness,interfaceroughness,and film thickness(2).5.5 The depth profile interface widths can be m
16、easuredusing a logistic function which is described in Practice E1636.6.Ion Sputtering6.1 The specimen should be handled in accordance withGuides E1078 and E1829.First introduce the specimen into avacuum chamber equipped with an Auger analyzer and an ionsputtering gun.Align the ion beam using a sputtering target ora Faraday cup,paying careful attention to the relative spot sizeof the electron beam,ion beam,and Faraday cup and theirrespective orientations to ensure accurate convergence of thetwo
