1、Designation:F 1188 00Standard Test Method forInterstitial Atomic Oxygen Content of Silicon by InfraredAbsorption1This standard is issued under the fixed designation F 1188;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of l
2、ast revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This test method covers the determination of the inter-stitial oxygen content of single crystal silicon by infraredspectros
3、copy.2,3,4,5,6,7This test method requires the use of anoxygen-free reference specimen and a set of calibration stan-dards,such as those comprising NIST SRM 2551.8,9It permits,but does not require,the use of a computerized spectropho-tometer.1.2 The useful range of oxygen concentration measurableby t
4、his test method is from 1 3 1016atoms/cm3to themaximum amount of interstitial oxygen soluble in silicon.1.3 The oxygen concentration obtained using this testmethod assumes a linear relationship between the interstitialoxygen concentration and the absorption coefficient of the 1107cm1band associated
5、with interstitial oxygen in silicon.1.4 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitat
6、ions prior to use.2.Referenced Documents2.1 ASTM Standards:E 1 Specification for ASTM Thermometers10E 131 Terminology Relating to Molecular Spectroscopy11E 932 Practice for Describing and Measuring Performanceof Dispersive Infrared Spectrophotometers113.Terminology3.1 For definitions of terms relati
7、ng to absorption spectros-copy,refer to Terminology E 131.3.2 Definitions:3.2.1 dispersive infrared(DIR)spectrophotometer,natype of infrared spectrometer that uses at least one prism orgrating as the dispersing element,in which the data areobtained as an amplitude-wavenumber(or wavelength)spec-trum.
8、3.2.1.1 DiscussionSome dispersive infrared spectrom-eters are used in conjunction with a computer,which is used tostore data.The data are then accessible for manipulation orcomputation,as required.These spectrometers are referred toas computer-assisted dispersive infrared spectrophotometer(CA-DIR).D
9、ispersive infrared spectrometers that are notcomputer-assisted are referred to,for convenience,as simpledispersive infrared spectrometers(S-DIR).3.2.2 Fourier transform infrared(FT-IR)spectrophotom-eter,na type of infrared spectrometer in which the data areobtained as an interferogram.3.2.2.1 Discus
10、sionAn interferogram is a record of themodulated component of the interference signal measured bythe detector as a function of retardation in the interferometer.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.06 on
11、SiliconMaterials and Process Controls.Current edition approved June 10,2000.Published August 2000.Originallypublished as F 1188 88.Last previous edition F 1188 93a.2ASTM Test Method F 121(editions of 1980 through 1983,replaced by TestMethod F 1188 in 1988).3DIN 50438,Part 1(edition of 1973,revised t
12、o cite IOC-88 in 1995),DIN50438,Part 1(1995)is referred to in Tables X1.1 and X1.2.4Iizuka,T.,Takasu,S.,Tajima,M.,Arai,T.,Nozaki,T.,Inoue,N.,and Watanabe,M.,“Determination of Conversion Factor for Infrared Measurement of Oxygen inSilicon,”Journal of the Electrochemical Society,Vol 132,1985,pp.170717
13、13.JEDIA standard 61-2000(Standard Test Method for Atomic Oxygen Content ofSilicon by Infrared Absorption)issued in 2000,cites I0C-88.5Old edition;cited in Reference 6.Since revised to cite I0C88.6Baghdadi,A.,Bullis,W.M.,Coarkin,M.C.,Li Yue-zhen,Scace,R.I.,Series,R.W.,Stallhofer,P.,and Watanabe,M.,“
14、Interlaboratory Determination of theCalibration Factor for the Measurement of the Interstitial Oxygen Content of Siliconby Infrared Absorption,”Journal of the Electrochemical Society,Vol 136,1989,pp.20152034.7ASTM Test Method F 121(editions of 1970 through 1979).8SRM 2551,available from the National
15、 Institute of Standards and Technology,Gaithersburg,MD 20899 USA,has been found to be suitable for this purpose.9DIN 50438 Part 1 is similar to,but more general than,this test method.Itincludes two methods:Method A,which is restricted to double side polished orpolish-etched wafers,and Method B,which
16、 is applicable to wafers with one sidepolished and one side etched for wafers as thin as 0.03 cm.DIN 50438 Part 1 isintended for use with computer aided spectrophotometers,whether dispersive orFTIR.It is the responsibility of DIN Committee NMP 221 with which ASTM F-1maintains close liason.DIN 50438 Part 1,Determination of Impurity Content inSemiconductors by Infrared Absorption,Oxygen in Silicon,may be obtained fromBeuth Verlag GmbH,Berggrafenstrasse 4-10,D-1000 Berlin 30,Germany(see alsothe Rel
