1、Designation:F 1392 00Standard Test Method forDetermining Net Carrier Density Profiles in Silicon Wafersby Capacitance-Voltage Measurements With a MercuryProbe1This standard is issued under the fixed designation F 1392;the number immediately following the designation indicates the year oforiginal ado
2、ption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This test method2covers the measurement of net carrierdensity and net carrier
3、 density profiles in epitaxial and polishedbulk silicon wafers in the range from about 4 3 1013to about8 3 1016carriers/cm3(resistivity range from about 0.1 toabout 100 Vcm in n-type wafers and from about 0.24 to about330 Vcm in p-type wafers).1.2 This test method requires the formation of a Schottk
4、ybarrier diode with a mercury probe contact to an epitaxial orpolished wafer surface.Chemical treatment of the siliconsurface may be required to produce a reliable Schottky barrierdiode(1).3The surface treatment chemistries are different forn-and p-type wafers.This test method is sometimes considere
5、ddestructive due to the possibility of contamination from theSchottky contact formed on the wafer surface;however,repetitive measurements may be made on the same testspecimen.1.3 This test method may be applied to epitaxial layers onthe same or opposite conductivity type substrate.This testmethod in
6、cludes descriptions of fixtures for measuring sub-strates with or without an insulating backseal layer.1.4 The depth of the region that can be profiled depends onthe doping level in the test specimen.Based on data reportedby Severin(1)and Grove(2),Fig.1 shows the relationshipsbetween depletion depth
7、,dopant density,and applied voltagetogether with the breakdown voltage of a mercury siliconcontact.The test specimen can be profiled from approximatelythe depletion depth corresponding to an applied voltage of 1 Vto the depletion depth corresponding to the maximum appliedvoltage(200 V or about 80%of
8、 the breakdown voltage,whichever is lower).To be measured by this test method,alayer must be thicker than the depletion depth corresponding toan applied voltage of 2 V.1.5 This test method is intended for rapid carrier densitydetermination when extended sample preparation time or hightemperature pro
9、cessing of the wafer is not practical.NOTE1Test Method F 419 is an alternative method for determiningnet carrier density profiles in silicon wafers from capacitance-voltagemeasurements.This test method requires the use of one of the followingstructures:(1)a gated or ungated p-n junction diode fabric
10、ated using eitherplanar or mesa technology or(2)an evaporated metal Schottky diode.1.6 This test method provides for determining the effectivearea of the mercury probe contact using polished bulk refer-ence wafers that have been measured for resistivity at 23C inaccordance with Test Method F 84(Note
11、 2).This test methodalso includes procedures for calibration of the apparatus formeasuring both capacitance and voltage.NOTE2An alternative method of determining the effective area of themercury probe contact that involves the use of reference wafers whose netcarrier density has been measured using
12、fabricated mesa or planar p-njunction diodes or evaporated Schottky diodes is not included in this testmethod but may be used if agreed upon by the parties to the test.1.7 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of th
13、e user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.Specific hazardstatements are given in 7.1,(7.2,7.10.3(Note 7),8.2,11.5.1,11.6.3,and 11.6.5.2.Referenced Documents2.1 ASTM Standards:D 5127 Guide for
14、Ultra Pure Water Used in the Electronicsand Semiconductor Industry4D 4356 Practice for Establishing Consistent Test MethodTolerances5E 691 Practice for Conducting an Interlaboratory Study to1This test method is under the jurisdiction of ASTM Committee F-1 onElectronics and is the direct responsibili
15、ty of Subcommittee F01.06 on SiliconMaterials and Process Control.Current edition approved June 10,2000.Published August 2000.Originallypublished as F 1392 92.Last previous edition F 1392 93.2DIN 50439,Determination of the Dopant Concentration Profile of a SingleCrystal Semiconductor Material by Mea
16、ns of the Capacitance-Voltage Method andMercury Contact,is technically equivalent to this test method.DIN 50439 is theresponsibility of DIN Committee NMP 221,with which Committee F-1 maintainsclose liaison.DIN 50439 is available from Beuth Verlag GmbH,Burggrafenstrae4-10,D-1000,Berlin 30,Germany.3The boldface numbers in parentheses refer to the list of references at the end ofthis test method.4Annual Book of ASTM Standards,Vol 11.01.5Annual Book of ASTM Standards,Vol 14.02.1Copyright ASTM Intern
