1、Designation:F 1619 95(Reapproved 2000)Standard Test Method forMeasurement of Interstitial Oxygen Content of SiliconWafers by Infrared Absorption Spectroscopy withp-Polarized Radiation Incident at the Brewster Angle1This standard is issued under the fixed designation F 1619;the number immediately fol
2、lowing the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This test method2cove
3、rs determination of the absorp-tion coefficient due to the interstitial oxygen content ofcommercial monocrystalline silicon wafers by means of Fou-rier transform infrared(FT-IR)spectroscopy.In this testmethod,the incident radiation is p-polarized and incident onthe test specimen at the Brewster angl
4、e in order to minimizemultiple reflections.3NOTE1In this test method,radiation in which the electric vector isparallel to the plane of incidence is defined as p-polarized radiation.NOTE2Committee F-1 has been advised that some aspects of this testmethod may be subject to a patent applied for by Tosh
5、iba CeramicsCorporation.4The Committee takes no position with respect to theapplicability or validity of such patents,but it requests users of this testmethod and other interested parties to supply any information available onnon-patented alternatives for use in connection with this test method.1.2
6、Since the interstitial oxygen concentration is propor-tional to the absorption coefficient of the 1107 cm1absorptionband,the interstitial oxygen content of the wafer can bederived directly using an independently determined calibrationfactor.1.3 The test specimen is a single-side polished silicon waf
7、erof the type specified in SEMI Specifications M1.The frontsurface of the wafer is mirror polished and the back surfacemay be as-cut,lapped,or etched(see 8.1.1.1).1.4 This test method is applicable to silicon wafers withresistivity greater than 5 Vcm at room temperature.1.5 This standard does not pu
8、rport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:F 1188
9、 Test Method for Interstitial Atomic Oxygen Contentof Silicon by Infrared Absorption5F 1241 Terminology of Silicon Technology52.2SEMI Standard:SEMI M1Specifications for Polished MonocrystallineSilicon Wafers63.Terminology3.1 Definitions of terms related to silicon technology arefound in Terminology
10、F 1241.3.2 Definitions of terms related specifically to FT-IR spec-troscopy are found in Test Method F 1188.4.Summary of Test Method4.1 The stability of the FT-IR spectrometer is established tobe adequate for the measurement cycle.4.2 The optimum angle of incidence is determined tominimize multiple
11、internal reflection.4.3 The transmission spectrum of an oxygen-free double-side polished float-zone wafer is recorded.4.4 The transmission spectrum of the oxygen-containingtest specimen is determined.4.5 The negative logarithm of each of these transmissionspectra is taken to determine the absorbance
12、 spectra.4.6 The absorbance spectra are normalized by dividing bythe beam path length to obtain the absorption coefficient as afunction of wavenumber.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.06 on SiliconMate
13、rials and Process Control.Current edition approved Sept.15,1995.Published November 1995.2This standard is based on draft procedures and interlaboratory tests conductedby the Silicon Wafer Committee of the SEMI Japan Standards Program and theOxygen and Carbon Measurement Committee of the Japan Electr
14、onic IndustryDevelopment Association(JEIDA).3Krishnan,K.,“Precise and Rapid Measurement of Oxygen and Carbon inSilicon,”Defects in Silicon,edited by W.M.Bullis and L.C.Kimerling,Proceedings Volume 83-9,The Electrochemical Society,Pennington,NJ,1983,pp.285292;Shirai,H.,“Determination of Oxygen Concen
15、tration in Single-SidePolished Czochralski-Grown Silicon Wavers by p-Polarized Brewster Angle Inci-dence Infrared Spectroscopy,”Journal of The Electrochemical Society,Vol 138,No.6,1991,pp.17841787;Shirai,H.,“Oxygen Measurements in Acid-EtchedCzochralski-Grown Silicon Wafers,”Journal of The Electroch
16、emical Society,Vol139,No.11,1992,pp.32723275.4“Measuring Method of Interstitial Oxygen Content of Silicon Wafers,”U.S.Patent applied for.Information concerning use of the concepts covered by this patentapplication and its state of issuance may be obtained from Intellectual PropertyDepartment,Toshiba Ceramics Co.,Ltd.,Shinjuku Nomura Building,26-2 Nishi-Shinjuku,1-Chome,Shinjuku-ku,Tokyo 163-05,Japan,Facsimile+81-3-3343-8627.5Annual Book of ASTM Standards,Vol 10.05.6Available from Semiconductor E
