1、Designation:F4399DIN50431StandardTestMethodsforResistivityofSemiconductorMaterials1Thissta ndar disissuedundert hefixeddesignat ionF43;t henum berim m ediat elyfollowingt hedesignat ionindicat est heyearofor iginala doptionor,int hecaseofrevision,t heyearoflastrevision.Anum berinparent hesesindicat
2、est heyearoflastreapproval.Asuperscr iptepsilon(e)indicat esanedit or ialchangesincet helastrevisionorreapproval.1.Scope1.1Theresist ivit yofasem iconduct orm a t eria lisa nim port a ntm a t eria lsa ccept a ncerequirem ent.R esist ivit ydet er-m ina t ionsma deduringdevicefa brica t iona rea lsowi
3、delyusedforqua lit ycont rolpurposes.1.2Theset estm et hods2covert woprocedureswhicha rewidelyusedform a k ingrout inem ea surem ent s.Theseproce-duresa pplydirect lyt obot hsilicona ndgerm a nium.Applica-t ionoft heseprocedurest oot h ersem iconduct orm a t eria lsma yrequiret heuseofdifferentprobe
4、m a t eria la ndprobea t t a ch-m ent.1.2.1Meth odA,Tw o-ProbeThist estm et hodrequiresaba rspecim enofm ea sura blecrosssect iona ndwit hcross-sect iona ldim ensionssm a llincom pa risonwit ht helengt hoft heba r.Form a t eria lsforwhichnospecificASTMrefereem et hodha sbeendeveloped,thist estm et h
5、odisr ecom m endedform a teria lsa ccept a ncepurposes.1.2.2Meth odB,Four-ProbeThist estm et hodisr a pida nddoesnotrequireaspecim enofr egula rcrosssect ion.Thist estm et hodm a ybeusedonirregula rlysha pedspecim ens,pro-videdafla tregionisa va ila blefort hecont a ct ingprobes.Asdescr ibedint hiss
6、t a nda rd,t hist estm et hodisa pplica bleonlyt ospecim enssucht ha tthet hick nessoft hespecimena ndt hedist a ncefroma nyprobepointt ot henea restedgea rebot ha tlea stfourt im est heprobespa cing(Not e1).Forthespecia lca seofspecim ensofcircula rcrosssect ionwit ht hick nessm oret ha none,butles
7、st ha nfour,t im estheprobespa cing,m ea surem ent sbyt hist estm ethoda repossible;t herequireda pplica t ionofa pproxim a t egeom et riccorr ect ionswillresultinim proveda ccura cy(see9.1.3).1.2.3Ingenera l,resist ivit ym ea sur em ent sa rem ostrelia blewhenm a deonsinglecryst a ls,sincewit hsuch
8、m a t eria lloca lva ria t ionsinim purit ywhicha ffecttheresist ivit ya relesssevere.Loca lizedim purit ysegrega t iona tgra inbounda riesinpolycryst a llinem a t eria lm a yresultinla rgeresist ivit yva ria-t ions.Sucheffect sa recom m ont oeit heroft hem ea sur em entt estm et hodsbuta rem oresev
9、erewit ht hefour-probet estm et hod,a ndit suse,t herefore,isnotrecom m endedforpoly-cryst a llinem a t eria l.1.3Theva luesst a t edinSIunit sa ret oberega rdeda st hest a nda rd.Theva luesgiveninpa rent hesesa reforinform a t iononly.1.4Thi sstan darddoesn otpurporttoaddressallofth esafetyc on c e
10、rn s,i fan y,assoc i atedw i thi tsuse.Iti sth erespon si bi li tyoftheuserofthi sstan dardtoestabli shappro-pri atesafetyan dhealthprac ti c esan ddetermi n etheappli c a-bi li tyofregulatoryli mi tati on spri ortouse.2.Refer encedDocument s2.1ASTMStan dards:F76TestMet hodsforMea suringR esist ivit
11、 ya ndHa llCoefficienta ndDet erm iningHa llMobilit yinSingle-Cryst a lSem iconduct ors3F84TestMet hodforMea suringR esist ivit yofSiliconWa ferswit ha nIn-LineFour-PointProbe3F374TestMet hodforSheetR esist a nceofSiliconEpi-t a xia l,Diffused,Polysilicon,a ndIon-Im pla nt edLa yersUsinga nIn-LineFo
12、ur-PointProbe3F397TestMet hodforR esist ivit yofSiliconBa rsUsingaTwo-PointProbe3F533TestMet hodforThick nessa ndThick nessVa ria t ionofSiliconSlices3F613TestMet hodforMea suringDia m et erofSem iconduc-t orWa fers32.2Ameri c anNati on alStan dard:B74.10Specifica t ionforGra dingofAbra siveMicrogri
13、t s4NOTE1Ot herASTMm et hodsar epr efer r edforuseinvar iousspecialcir cum sta nces.Form easur ementsont hinslices,useTestMet hodF84;t hismeth odispr efer r edforr efer eemeasur ementsonsiliconslices.Formeasur em entsonspecimensforwhichpointcont act sar eunsatisfact or y,useapr ocedur einTestMethods
14、F76.Fort wo-pr ober efer eem easur e-mentsoncylindr icalsinglecr ystalbar s,useTestMethodF397.Forfour-pr ober efer eemeasur ementsofsheetr esistanceonepit axiallayer sdepositedonordiffusedorim plantedintoopposit econductivit y-t ype1Theset estm et hodsar eundert hejur isdict ionofASTMCom m it t eeF-
15、1onElectr onicsa ndaret hedir ectr esponsibilit yofSubcom m it t eeF01.06onSiliconMat e r ia lsandProcessCont rol.Curr entedit ionapprovedDec.10,1999.PublishedFebruar y2000.OriginallypublishedasF4364T.Lastpr eviousedit ionF4393.2DIN50431isanequivalentm et hod.Itist heresponsibilit yofDINCom m it t e
16、eNMP221,withwhichCommitteeF-1maintainsclosetechnicalliaison.DIN50431,Test ingofInorganicSem iconduct orMat er ia ls:Measur em entoft heSpecificElect ricalR esist anceofMonocr yst alsofSiliconorGer m aniumbyt heFour-PointDirect-Curr entTechniquewit hLinearlyArr angedProbes,isavailablefr omBeut hVerlagGm bHBurggrafenst rasse4-10,D-1000Berlin30,FederalRepu blicofGer m a ny.3An n ualBookofASTMStan dards,Vol10.05.4AvailablefromAm ericanNat ionalSt andardsInst it ut e,11West42ndSt.,13t hFloor,NewYork,
