1、Designation:F 523 93(Reapproved 1997)Standard Practice forUnaided Visual Inspection of Polished Silicon WaferSurfaces1This standard is issued under the fixed designation F 523;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year
2、of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This practice covers an inspection procedure for deter-mining the surface quality of silicon wafers that have beenpolis
3、hed on one side.1.2 This practice is intended as a large-volume acceptancemethod and as such does not require use of a microscope orother optical instruments.Because the inspection relies on thevisual acuity of the operator,test results may be very operator-sensitive.NOTE1For clarification of the id
4、entification of certain observeddefects,procedures given in Practices F 154 may be employed.1.3 Defects visible to the unaided eye on polished wafersurfaces are categorized in three groups by the illuminationgeometry which best delineates them:front-surface high-intensity light,front-surface diffuse
5、 light,and back-surfacediffuse light.These defects originate from two sources:(1)those which are caused by imperfections in the silicon crystal,and(2)those related to the manufacturing process,includinghandling and packaging.1.4 The inspection described generally takes place afterpolishing and post-
6、polish cleaning but before packaging.Al-though cleaning and packaging procedures are not a part of thispractice,the inspection may be performed on a packagedproduct to determine the effect of such procedures on thequality of the polished wafers.1.5 The values stated in SI units are to be regarded as
7、 thestandard.The values given in parentheses are for informationonly.1.6This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the appl
8、ica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:F 154 Practices and Nomenclature for Identification ofStructures and Contaminants Seen on Specular SiliconSurfaces2F 416 Test Method for Detection of Oxidation InducedDefects in Polished Silicon Wafers22.2Fede
9、ral Standard:Fed.Std.No.209D Clean Room and Work Station Require-ments,Controlled Environment32.3Military Standard:MIL-STD-105E Sampling Procedures and Tables for In-spection by Attributes33.Terminology3.1 Definitions:3.1.1 back surfaceof a semiconductor wafer,the exposedsurface opposite to that upo
10、n which active semiconductordevices have been or will be fabricated.3.1.2 chipin semiconductor wafers,region where materialhas been removed from the surface or edge of the wafer.3.1.3contaminant,areaforeign matter that is visible tothe unaided eye under high-intensity illumination on the wafer,of ex
11、tent greater than a single light-point defect.3.1.4 crackcleavage or fracture that extends to the surfaceof a wafer.3.1.5 crateringa surface texture of irregular closed ridgeswith smooth central regions.3.1.6 crows foot on semiconductor wafers,intersectingcracks in a pattern resembling a 88crows foo
12、t(Y)on 111surfaces and a cross(+)on 100 surfaces.3.1.7dimpleon semiconductor wafers,a smooth surfacedepression larger than 3 mm in diameter.3.1.8 front surfaceof a semiconductor wafer,the exposedsurface on which active devices have been or will be fabri-cated.3.1.9 groovein a semiconductor wafer,a s
13、hallow scratchwith rounded edges,that is usually the remnant of a scratch notcompletely removed by mechanical polishing.3.1.10hazeon a semiconductor wafer,a cloudy or hazyappearance attributable to light scattering by concentrations ofmicroscopic surface irregularities such as pits,mounds,smallridge
14、s or scratches,particles,etc.1This practice is under the jurisdiction of ASTM Committee F-1 on Electronicsand is the direct responsibility of Subcommittee F01.06 on Electrical and OpticalMeasurement.Current edition approved Sept.15,1993.Published November 1993.Originallypublished as F 523 77 T.Last
15、previous edition F 523 88.2Annual Book of ASTM Standards,Vol.10.05.3Available from Standardization Documents Order Desk,Bldg.4 Section D,700Robbins Ave.,Philadelphia,PA 19111-5094,Attn:NPODS.1AMERICAN SOCIETY FOR TESTING AND MATERIALS100 Barr Harbor Dr.,West Conshohocken,PA 19428Reprinted from the A
16、nnual Book of ASTM Standards.Copyright ASTM3.1.10.1 DiscussionThe light reflection from an indi-vidual irregularity cannot be readily detected by the unaidedeye so haze is a mass effect seen as a high density of tinyreflections.3.1.11 imbedded abrasive grainson a semiconductor wa-fer,abrasive particles mechanically forced into the surface.3.1.12light point defectan isolated,localized effect onor in a wafer surface such as a particle or pit resulting inincreased light scattering intensity relativ
