1、Designation:F744M10Standard Test Method forMeasuring Dose Rate Threshold for Upset of DigitalIntegrated Circuits(Metric)1This standard is issued under the fixed designation F744M;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the ye
2、ar of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.This standard has been approved for use by agencies of the U.S.Department of Defense.1.Scope1.1 This test method covers the meas
3、urement of the thresh-old level of radiation dose rate that causes upset in digitalintegrated circuits under static operating conditions.The radia-tion source is either a flash X-ray machine(FXR)or an electronlinear accelerator(LINAC).1.2 The precision of the measurement depends on thehomogeneity of
4、 the radiation field and on the precision of theradiation dosimetry and the recording instrumentation.1.3 The test may be destructive either for further tests or forpurposes other than this test if the integrated circuit beingtested absorbs a total radiation dose exceeding some predeter-mined level.
5、Because this level depends both on the kind ofintegrated circuit and on the application,a specific value mustbe agreed upon by the parties to the test(6.8).1.4 Setup,calibration,and test circuit evaluation proceduresare included in this test method.1.5 Procedures for lot qualification and sampling a
6、re notincluded in this test method.1.6 Because of the variability of the response of differentdevice types,the initial dose rate for any specific test is notgiven in this test method but must be agreed upon by the partiesto the test.1.7 The values stated in SI units are to be regarded asstandard.No
7、other units of measurement are included in thisstandard.1.8 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility o
8、f regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:2E665 Practice for DeterminingAbsorbed Dose Versus Depthin Materials Exposed to the X-Ray Output of Flash X-RayMachines(Withdrawn 2000)3E666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE668 Practice for
9、 Application of Thermoluminescence-Dosimetry(TLD)Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray SourcesF526 Test Method for Using Calorimeters for Total DoseMeasurements in Pulsed Li
10、near Accelerator or FlashX-ray Machines3.Terminology3.1 Definitions:3.1.1 determined integrated circuitintegrated circuitwhose output is a unique function of the inputs;the outputchanges if and only if the input changes(for example,AND-and OR-gates).3.1.2 dose rateenergy absorbed per unit time and p
11、er unitmass by a given material from the radiation to which it isexposed.3.1.3 dose rate threshold for upsetminimum dose rate thatcauses either:(1)the instantaneous output voltage of anoperating digital integrated circuit to be greater than thespecified maximum LOW value(for a LOW output level)orles
12、s than the specified minimum HIGH value(for a HIGHoutput level),or(2)a change of state of any stored data.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.11 on Nuclear andSpace Radiation Effects.Current edition appr
13、oved May 1,2010.Published June 2010.Originallyapproved in 1981.Last previous edition approved in 2003 as F744M 97(2003).DOI:10.1520/F0744M-10.2For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Book of ASTMStandards volume
14、information,refer to the standards Document Summary page onthe ASTM website.3Withdrawn.The last approved version of this historical standard is referencedon www.astm.org.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 3.1.4 non-determined
15、 integrated circuitintegrated circuitwhose output or internal operating conditions are not uniquefunctions of the inputs(for example,flip-flops,shift registers,and RAMs).4.Summary of Test Method4.1 The test device and suitable dosimeters are irradiated byeither an FXR or a linac.The test device is o
16、perating but understatic conditions.The output(s)of the test device and of thedosimeters are recorded.4.2 The dose rate is varied to determine the rate whichresults in upset of the test device.4.3 For the purposes of this test method,upset is consideredto be either of the following:4.3.1 An output voltage transient exceeding a predeter-mined value,or4.3.2 For devices having output logic levels which are notunique functions of the input logic levels,such as flip-flops,achange in the logic state o
