1、Designation:F773M10Standard Practice forMeasuring Dose Rate Response of Linear IntegratedCircuits(Metric)1This standard is issued under the fixed designation F773M;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revi
2、sion.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 This practice covers the measurement of the response oflinear integrated circuits,under given operating conditions,topulsed ionizing
3、 radiation.The response may be either transientor more lasting,such as latchup.The radiation source is eithera flash X-ray machine(FXR)or an electron linear accelerator(LINAC).1.2 The precision of the measurement depends on thehomogeneity of the radiation field and on the precision of theradiation d
4、osimetry and the recording instrumentation.1.3 The test may be considered to be destructive either forfurther tests or for other purposes if the total radiation ionizingdose exceeds some predetermined level or if the part shouldlatch up.Because this level depends both on the kind ofintegrated circui
5、t and on the application,a specific value mustbe agreed upon by the parties to the test.(See 6.10.)1.4 Setup,calibration,and test circuit evaluation proceduresare included in this practice.1.5 Procedures for lot qualification and sampling are notincluded in this practice.1.6 Because response varies
6、with different device types,thedose rate range for any specific test is not given in this practicebut must be agreed upon by the parties to the test.1.7 The values stated in SI units are to be regarded asstandard.No other units of measurement are included in thisstandard.1.8 This standard does not p
7、urport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:2E666
8、 Practice for Calculating Absorbed Dose From Gammaor X RadiationE668 Practice for Application of Thermoluminescence-Dosimetry(TLD)Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray Sourc
9、esF526 Test Method for Using Calorimeters for Total DoseMeasurements in Pulsed Linear Accelerator or FlashX-ray Machines3.Terminology3.1 Definitions:3.1.1 dose rateenergy absorbed per unit time and per unitmass by a given material from the radiation to which it isexposed.3.1.2 dose rate induced latc
10、hupRegenerative device ac-tion in which a parasitic region(e.g.,a four(4)layer p-n-p-n orn-p-n-p path)is turned on by a photocurrent generated by apulse of ionizing radiation and remains on for an indefiniteperiod of time after the photocurrent subsides.The device willremain latched as long as the p
11、ower supply delivers voltagegreater than the holding voltage and current greater than theholding current.Latchup may disrupt normal circuit operationin some portion of the circuits,and may also cause catastrophicfailure due to local heating of semiconductor regions,metalli-zations or bond wires.3.1.
12、2.1 DiscussionLatchup is very sensitive at highervoltages and maximum voltage.The observance of latchup willbe seen readily if these operation conditions are achieved.3.1.3 dose rate responsethe change that occurs in anobserved characteristic of an operating linear integrated circuitinduced by a rad
13、iation pulse of a given dose rate.3.1.4 latchup windowA latchup window is the phenom-enon in which a device exhibits latchup in a specific range of1This practice is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and Space
14、Radiation Effects.Current edition approved May 1,2010.Published June 2010.Originallyapproved in 1982.Last previous edition approved in 2003 as F773M 96(2003).DOI:10.1520/F0773M-10.2For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.Fo
15、r Annual Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 dose rates.Above and below this range,the device does notlatchup.A device ma
16、y exhibit more than one latchup window.This phenomenon has been observed for some complimentarymetal-oxide-semiconductor(CMOS)logic devices,oxide side-wall logic and large scale integration(LSI)memories and mayoccur in the other devices.3.1.5 upset thresholdThe minimum dose rate at which thedevice upsets.However,the reported measured upset thresholdshall be the maximum dose rate at which the device does notupset and which the transient disturbance of the outputwaveform and or supply current rema
