1、 IEC 61435 Edition 2.0 2013-08 INTERNATIONAL STANDARD Nuclear instrumentation High-purity germanium crystals for radiation detectors Measurement methods of basic characteristics IEC 61435:2013(E)Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,downloaded on Nov-27-2014 by
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10、3-08 INTERNATIONAL STANDARD Nuclear instrumentation High-purity germanium crystals for radiation detectors Measurement methods of basic characteristics INTERNATIONAL ELECTROTECHNICAL COMMISSION V ICS 27.120 PRICE CODE ISBN 978-2-8322-1033-8 Registered trademark of the International Electrotechnical
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12、5 IEC:2013(E)CONTENTS FOREWORD.4 INTRODUCTION.6 1 Scope and object.7 2 Normative references.7 3 Terms,definitions,symbols and abbreviations.7 3.1 Terms and definitions.7 3.2 Symbols and abbreviations.9 Symbols.9 3.2.1 Abbreviations.10 3.2.23.3 Quantities and units.10 4 Measurement of net electricall
13、y-active impurity concentrations.10 4.1 Sample preparation for Van der Pauw measurements.10 General.10 4.1.1 Equipment.11 4.1.2 Dimensions and provisions for contacts.11 4.1.3 Etching.12 4.1.44.2 Measurements of(NA ND).13 General.13 4.2.1 Equipment.13 4.2.2 Measurements of resistivity.14 4.2.3 Measu
14、rements of Hall coefficient.14 4.2.4 Calculation of(NA ND)from resistivity.15 4.2.5 Calculation of drift mobility from a Van der Pauw measurement.15 4.2.6 Computation of(NA ND)from RH.16 4.2.7 Spatial dependence of(NA ND).17 4.2.8 Axial variations in(NA ND).18 4.2.95 Deep level transient spectroscop
15、y for the determination of impurity-centre concentration.18 5.1 General.18 5.2 Equipment for DLTS method.18 5.3 Sample selection and preparation for DLTS.19 5.4 Measurements for the determination of impurity-centre concentration.19 General.19 5.4.1 DLTS signal as a function of temperature.21 5.4.2 C
16、alculation of(NA ND).21 5.4.3 Corrections for equivalent circuit effects.21 5.4.4 Corrections for high trap concentrations and for voltage pulse height.23 5.4.5 pcVVtechnique for measuring NT.23 5.4.65.5 Majority-carrier deep levels in p-type HPGe.24 5.6 Majority-carrier deep levels in n-type HPGe.25 5.7 Report.26 6 Crystallographic properties.26 6.1 General.26 6.2 Crystallographic orientation.26 6.3 Sample preparation.26 Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific)
