1、Designation:F7608Standard Test Methods forMeasuring Resistivity and Hall Coefficient and DeterminingHall Mobility in Single-Crystal Semiconductors1This standard is issued under the fixed designation F76;the number immediately following the designation indicates the year of originaladoption or,in the
2、 case of revision,the year of last revision.Anumber in parentheses indicates the year of last reapproval.Asuperscriptepsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 These test methods cover two procedures for measuringthe resistivity and Hall coefficient of si
3、ngle-crystal semicon-ductor specimens.These test methods differ most substantiallyin their test specimen requirements.1.1.1 Test Method A,van der Pauw(1)2This test methodrequires a singly connected test specimen(without any isolatedholes),homogeneous in thickness,but of arbitrary shape.Thecontacts m
4、ust be sufficiently small and located at the peripheryof the specimen.The measurement is most easily interpretedfor an isotropic semiconductor whose conduction is dominatedby a single type of carrier.1.1.2 Test Method B,Parallelepiped or Bridge-TypeThistest method requires a specimen homogeneous in
5、thickness andof specified shape.Contact requirements are specified for boththe parallelepiped and bridge geometries.These test specimengeometries are desirable for anisotropic semiconductors forwhich the measured parameters depend on the direction ofcurrent flow.The test method is also most easily i
6、nterpretedwhen conduction is dominated by a single type of carrier.1.2 These test methods do not provide procedures forshaping,cleaning,or contacting specimens;however,a proce-dure for verifying contact quality is given.NOTE1Practice F418 covers the preparation of gallium arsenidephosphide specimens
7、.1.3 The method in Practice F418 does not provide aninterpretation of the results in terms of basic semiconductorproperties(for example,majority and minority carrier mobili-ties and densities).Some general guidance,applicable tocertain semiconductors and temperature ranges,is provided inthe Appendix
8、.For the most part,however,the interpretation isleft to the user.1.4 Interlaboratory tests of these test methods(Section 19)have been conducted only over a limited range of resistivitiesand for the semiconductors,germanium,silicon,and galliumarsenide.However,the method is applicable to other semicon
9、-ductors provided suitable specimen preparation and contactingprocedures are known.The resistivity range over which themethod is applicable is limited by the test specimen geometryand instrumentation sensitivity.1.5 The values stated in acceptable metric units are to beregarded as the standard.The v
10、alues given in parentheses arefor information only.(See also 3.1.4.)1.6 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the appl
11、ica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:3D1125 Test Methods for Electrical Conductivity and Resis-tivity of WaterE2554 Practice for Estimating and Monitoring the Uncer-tainty of Test Results of a Test Method Using ControlChart TechniquesF26 Test Met
12、hods for Determining the Orientation of aSemiconductive Single Crystal(Withdrawn 2003)4F43 Test Methods for Resistivity of Semiconductor Materi-als(Withdrawn 2003)4F47 Test Method for Crystallographic Perfection of Siliconby Preferential Etch Techniques4F418 Practice for Preparation of Samples of th
13、e ConstantComposition Region of Epitaxial Gallium Arsenide Phos-phide for Hall Effect Measurements(Withdrawn 2008)41These test methods are under the jurisdiction of ASTM Committee F01 onElectronics and are the direct responsibility of Subcommittee F01.15 on CompoundSemiconductors.Current edition app
14、roved June 15,2008.Published August 2008.Originallyapproved in 1967.Last previous edition approved in 2002 as F76 86(02).DOI:10.1520/F0076-08.2The boldface numbers in parentheses refer to the list of references at the end ofthese test methods.3For referenced ASTM standards,visit the ASTM website,www
15、.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.4The last approved version of this historical standard is referenced onwww.astm.org.Copyright ASTM International,100 Barr H
16、arbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 2.2 SEMI Standard:C1 Specifications for Reagents53.Terminology3.1 Definitions:3.1.1 Hall coeffcientthe ratio of the Hall electric field(due to the Hall voltage)to the product of the current densityand the magnetic flux density(see X1.4).3.1.2 Hall mobilitythe ratio of the magnitude of the Hallcoefficient to the resistivity;it is readily interpreted only in asystem with carriers of one charge type.(See X1.5)3.1.3 resistivityof
