1、Designation:F189212Standard Guide forIonizing Radiation(Total Dose)Effects Testing ofSemiconductor Devices1This standard is issued under the fixed designation F1892;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last rev
2、ision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.INTRODUCTIONThis guide is designed to assist investigators in performing ionizing radiation effects testing ofsemiconductor devices,commonly t
3、ermed total dose testing.When actual use conditions,whichinclude dose,dose rate,temperature,and bias conditions and the time sequence of application of theseconditions,are the same as those used in the test procedure,the results obtained using this guideapplies without qualification.For some part ty
4、pes,results obtained when following this guide aremuch more broadly applicable.There are many part types,however,where care must be used inextrapolating test results to situations that do not duplicate all aspects of the test conditions in whichthe response data were obtained.For example,some linear
5、 bipolar devices and devices containingmetal oxide semiconductor(MOS)structures require special treatment.This guide provides directionfor appropriate testing of such devices.1.Scope1.1 This guide presents background and guidelines forestablishing an appropriate sequence of tests and data analysispr
6、ocedures for determining the ionizing radiation(total dose)hardness of microelectronic devices for dose rates below 300rd(SiO2)/s.These tests and analysis will be appropriate to assistin the determination of the ability of the devices under test tomeet specific hardness requirements or to evaluate t
7、he parts foruse in a range of radiation environments.1.2 The methods and guidelines presented will be applicableto characterization,qualification,and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated cir-cuits.They will be appropriate for treatment of the effects ofelec
8、tron and photon irradiation.1.3 This guide provides a framework for choosing a testsequence based on general characteristics of the parts to betested and the radiation hardness requirements or goals forthese parts.1.4 This guide provides for tradeoffs between minimizingthe conservative nature of the
9、 testing method and minimizingthe required testing effort.1.5 Determination of an effective and economical hardnesstest typically will require several kinds of decisions.A partialenumeration of the decisions that typically must be made is asfollows:1.5.1 Determination of the Need to Perform DeviceCh
10、aracterizationFor some cases it may be more appropriateto adopt some kind of worst case testing scheme that does notrequire device characterization.For other cases it may be mosteffective to determine the effect of dose-rate on the radiationsensitivity of a device.As necessary,the appropriate level
11、ofdetail of such a characterization also must be determined.1.5.2 Determination of an Effective Strategy for Minimizingthe Effects of Irradiation Dose Rate on the Test ResultTheresults of radiation testing on some types of devices arerelatively insensitive to the dose rate of the radiation applied i
12、nthe test.In contrast,many MOS devices and some bipolardevices have a significant sensitivity to dose rate.Severaldifferent strategies for managing the dose rate sensitivity of testresults will be discussed.1.5.3 Choice of an Effective Test MethodologyThe selec-tion of effective test methodologies w
13、ill be discussed.1.6 Low Dose RequirementsHardness testing of MOS andbipolar microelectronic devices for the purpose of qualificationor lot acceptance is not necessary when the required hardnessis 100 rd(SiO2)or lower.1.7 SourcesThis guide will cover effects due to devicetesting using irradiation fr
14、om photon sources,such as60Co irradiators,137Cs irradiators,and low energy(approximately10 keV)X-ray sources.Other sources of test radiation such as1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRa
15、diation Effects.Current edition approved July 1,2012.Published September 2012.Originallyapproved in 1998.Last previous edition approved in 2006 as F1892 06.DOI:10.1520/F1892-12.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 linacs,Van de
16、 Graaff sources,Dymnamitrons,SEMs,and flashX-ray sources occasionally are used but are outside the scopeof this guide.1.8 Displacement damage effects are outside the scope ofthis guide,as well.1.9 The values stated in SI units are to be regarded as thestandard.2.Referenced Documents2.1 ASTM Standards:2E170 Terminology Relating to Radiation Measurements andDosimetryE666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE668 Practice for Application of Thermoluminescence-Dosimetry(TLD
