1、 IEC 62396-4 Edition 1.0 2013-09 INTERNATIONAL STANDARD Process management for avionics Atmospheric radiation effects Part 4:Design of high voltage aircraft electronics managing potential single event effects IEC 62396-4:2013(E)Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),
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10、printed.IEC 62396-4 Edition 1.0 2013-09 INTERNATIONAL STANDARD Process management for avionics Atmospheric radiation effects Part 4:Design of high voltage aircraft electronics managing potential single event effects INTERNATIONAL ELECTROTECHNICAL COMMISSION R ICS 03.100.50;31.020;49.060 PRICE CODE I
11、SBN 978-2-8322-1094-9 Registered trademark of the International Electrotechnical Commission Warning!Make sure that you obtained this publication from an authorized distributor.Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,downloaded on Nov-27-2014 by James Madison.No f
12、urther reproduction or distribution is permitted.Uncontrolled when printed.2 62396-4 IEC:2013(E)CONTENTS FOREWORD.3 INTRODUCTION.5 1 Scope.6 2 Normative references.6 3 Terms and definitions.6 4 Potential high voltage single event effects.6 5 Quantifying single event burnout in avionics for high volt
13、age devices.8 6 Relevant SEB data and applying it to avionics.9 6.1 SEB data from heavy ion testing is not relevant.9 6.2 SEB data from high energy neutron and proton testing.9 6.3 Calculating the SEB rate at aircraft altitudes.12 6.4 Measurement of high voltage component radiation characteristics,E
14、PICS.12 6.5 Single event burnout due to thermal neutrons.14 6.6 Alternative semiconductor materials to silicon.15 7 Conclusion.15 Bibliography.17 Figure 1 SEB cross sections measured in 400 V and 500 V MOSFETs for WNR neutron and proton beams.10 Figure 2 SEB cross sections measured in 1 000 V MOSFET
15、s and 1 200 V IGBTs with WNR neutron and 200 MeV proton beams.11 Figure 3 Measurement of radiation event charge and current.13 Figure 4 EPICS plot of 1 200 V diode numbers of events at currents taken at different applied voltages for a neutron fluence of approximately 3,5 109 neutrons per cm2 measur
16、ed at energies greater than 10 MeV.14 Figure 5 EPICS plot of 1 200 V diode numbers of events at currents taken at 675 V (56%)and 900 V(75%)applied voltage(stress)demonstrating the difference between low and high voltage stress Fluence as per Figure 4.14 Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,downloaded on Nov-27-2014 by James Madison.No further reproduction or distribution is permitted.Uncontrolled when printed.62396-4 IEC:2013(E)3 INTERNATIONAL ELECTROT
