1、 IEC 62396-1 Edition 2.0 2016-01 INTER NA TIONAL STA NDA R D Process management for av ionics At mospheric radiat ion effects Part 1:Accommodat ion of at mospheric radiat ion effect s v ia single ev ent effect s wit hin av ionics elect ronic equipment IEC 62396-1:2016-01(en)colourinsideCopyright Int
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11、tional Electrotechnical Commission IEC 62396-1 Edit ion 2.0 2016-01 INTER NA TIONAL STA NDA R D Process management for av ionics At mospheric radiation effect s Part 1:Accommodation of at mospheric radiation effects v ia single ev ent effect s wit hin av ionics elect ronic equipment INTERNATIONA L E
12、LECTROTECHNICA L COMMISSION ICS 03.100.50;31.020;49.060 ISBN 978-2-8322-3078-7 R egist er ed tr ademar k of t he Int er national Electr ot echnical Commission W arning!Make sure that y ou obtained this publication from an authorized distributor.colourinsideCopyright International Electrotechnical Co
13、mmission 2 IEC 62396-1:2016 IEC 2016 CONTENTS FOREWORD.6 INTRODUCTION.8 1 Scope.9 2 Normative references.9 3 Terms and definitions.9 4 Abbreviations and acronyms.18 5 Radiation environment of the atmosphere.21 5.1 Radiation generation.21 5.2 Effect of secondary particles on avionics.21 5.3 Atmospher
14、ic neutrons.21 5.3.1 General.21 5.3.2 Atmospheric neutrons energy spectrum and SEE cross-sections.22 5.3.3 Altitude variation of atmospheric neutrons.24 5.3.4 Latitude variation of atmospheric neutrons.25 5.3.5 Thermal neutrons within aircraft.27 5.4 Secondary protons.27 5.5 Other particles.28 5.6 S
15、olar enhancements.29 5.7 High altitudes greater than 60 000 ft(18 290 m).29 6 Effects of atmospheric radiation on avionics.30 6.1 Types of radiation effects.30 6.2 Single event effects(SEEs).30 6.2.1 General.30 6.2.2 Single event upset(SEU).31 6.2.3 Multiple bit upset(MBU)and multiple cell upset(MCU
16、).31 6.2.4 Single effect transients(SETs).33 6.2.5 Single event latch-up(SEL).34 6.2.6 Single event functional interrupt(SEFI).34 6.2.7 Single event burnout(SEB).34 6.2.8 Single event gate rupture(SEGR).35 6.2.9 Single event induced hard error(SHE).35 6.2.10 SEE potential risks based on future technology.35 6.3 Total ionising dose(TID).36 6.4 Displacement damage.37 7 Guidance for system designs.37 7.1 Overview.37 7.2 System design.40 7.3 Hardware considerations.41 7.4 Electronic devices characte
