1、STP990 Semiconductoi*Fabrication:Technology and Metrology Dinesh C.Gupta,editor ASTM 1916 Race Street Philadelphia,PA 19103 Copyright by ASTM Intl(all rights reserved);Sun Dec 27 14:19:46 EST 2015Downloaded/printed byUniversity of Washington(University of Washington)pursuant to License Agreement.No
2、further reproductions authorized.ASTM Publication Code Number(PCN):04-990000-46 ISBN:0-8031-1273-4 Copyright by AMERICAN SOCIETY FOR TESTING AND MATERIALS 1989 NOTE The Society is not responsible,as a body,for the statements and opinions advanced in this publication.Peer Review Policy Each paper pub
3、lished in this volume was evaluated by three peer reviewers.The authors addressed all of the reviewers comments to the satisfaction of both the technical editors)and the ASTM Committee on Publications.The quality of the papers in this publication reflects not only the obvious efforts of the authors
4、and the technical editor(s),but also the work of these peer reviewers.The ASTM Committee on Publications acknowledges with appreciation their dedication and contribution of time and ef-fort on behalf of ASTM.Printed in Ann Arbor,Ml July 1989 Copyright by ASTM Intl(all rights reserved);Sun Dec 27 14:
5、19:46 EST 2015Downloaded/printed byUniversity of Washington(University of Washington)pursuant to License Agreement.No further reproductions authorized.Foreword The Fifth International Symposium on Semiconductor Processing was held at Santa Clara,California on 1-5 February,1988 under the chairmanship
6、 of Dinesh C.Gupta,Siliconix Incorporated.The Symposium was sponsored by ASTM Commitee F-1 on Electronics and Semiconductor Equipment&Materials International SEMI in cooperation with National Institute for Standards and Technology NIST,Stanford University Center for Integrated Circuits and IEEE Comp
7、onents,Hybrids&Manufacturing Technology Society.The Symposium was made successful by the efforts of many persons who participated in the Advisory Board and various Committees.The guidence was provided by the Chairman and the Officers of ASTM Committee F-1 on Electronics and its various subcommittees
8、 including the Executive subcommittee.The following persons presided on the technical and workshop sessions:K.E.Benson,AT&T Bell Laboratories;M.I.Bell,J.R.Ehrstein,and R.D.Larrabee,National Institute for Standards and Technology;W.M.Bullis,Siltec Corporation;I-Wen Connick,Philips Research Laboratori
9、es;S.M.Cox,AT&T Technologies;T.E.Cynkar,Signetics Corporation;S.J.Fonash,The Pennsylvania State University;D.C.Gupta,Siliconix Inc.;W.A.Keenan,Prometrix Inc.;A.Lieberman,Particle Measuring Systems Inc.;J.W.Medernach,Sandia National Laboratories;D.Rogers,Cominco Ltd.;W.R.Schevey,Mancel Associates Inc
10、.;P.S.Speicher,RADC/RBRE;R.B.Swaroop,Electric Power Research Institute;C.H.Ting,Intel Corporation;and R.H.Unger,Motorola Incorporated.We are indebted to Kenneth Levy,KLA Instruments Corporation for the dinner speech,and are grateful to the members and guests of ASTM Committee F-1 and Standards Commi
11、ttees of SEMI who were called upon for special assignments during the two-year planning of the Symposium.Our special thanks to W.A.Baylies,Chairman,Committee F-1;P.L.Davis,SEMI;S.L.Kauffman,ASTM;R.I.Scace,National Institute for Standards and Technology and P.Wesling,Tandem Computers Incorporated.Cop
12、yright by ASTM Intl(all rights reserved);Sun Dec 27 14:19:46 EST 2015Downloaded/printed byUniversity of Washington(University of Washington)pursuant to License Agreement.No further reproductions authorized.Over one hundred and fifty scientists participated all over the world in the review process fo
13、r the papers published in this publication.Without their participation,this publication would not have been possible.And finally,we acknowledge the hard work and efforts of the staff of publication,review,editorial and marketing departments of ASTM in bringing out this book.Copyright by ASTM Intl(al
14、l rights reserved);Sun Dec 27 14:19:46 EST 2015Downloaded/printed byUniversity of Washington(University of Washington)pursuant to License Agreement.No further reproductions authorized.Contents Intradactioii SiucoN CRYSTAL GROWTH AND EPITAXIAL DEPOSITION TECHNIQUES Tlw Efiect of a RoUUktiwl Magnetic
15、Fieid on MCZ Ciystal Growing KENICm YAMASHTTA,SUMIO KOBAYASHI,TOSHIHIKO AOKI,YASUSHI KAWATA,AND TOSmO SHIRAIWA 7 Silicon Siice Fractore AnalysisLAWRENCE D.DYER 18 Ciiaiactetizadon of Higli Growth Rate Epitaxial Silicon from a New Single Wafer ReactorMCOONALD ROBINSON AND LAMONTE H.LAWRENCE 30 Soften
16、ing of Si and GaAs During Thermal ProcessHISAAKI SUGA,MINORU ICBIZAWA,KAZUYOSm E N D O,A N D KENn TOMIZAWA 43 Nnckation and Growth Kfawtics of Balk Microdefects in Heavily Doped Epitaxial Silicon WafersWTTAWAT wnARANAKULA,IOHN H.MATLOCK,AND HOWARD MOLLENKOPF 54 On the Application of Calibration Data to Spreading Resistance Analysis HARRY L.BERKOWTTZ 74 Epitaxial Silicon Quality Improvement by Automatic Smr&ice Inspection DAVID I.RUPRECHT,LANCE G.HELLWIG,AND ION A.ROSSI 87 Spreading Resistance Pr
