1、Designation:F189311Guide forMeasurement of Ionizing Dose-Rate Survivability andBurnout of Semiconductor Devices1This standard is issued under the fixed designation F1893;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of las
2、t revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 This guide defines the detailed requirements for testingsemiconductordevicesforshort-pulsehighdose-rateionization-induced surv
3、ivability and burnout failure.The testfacility shall be capable of providing the necessary dose ratesto perform the measurements.Typically,large flash X-ray(FXR)machines operated in the photon mode,or FXR e-beamfacilities are utilized because of their high dose-rate capabili-ties.Electron LinearAcce
4、lerators(LINACs)may be used if thedose rate is sufficient.Two modes of test are described:(1)Asurvivability test,and(2)A burnout failure level test.1.2 The values stated in International System of Units(SI)are to be regarded as standard.No other units of measurementare included in this standard.2.Re
5、ferenced Documents2.1 ASTM Standards:2E170 Terminology Relating to Radiation Measurements andDosimetryE668 Practice for Application of Thermoluminescence-Dosimetry(TLD)Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE1894 Guide for Selecting Dosimetry Systems
6、for Applica-tion in Pulsed X-Ray SourcesF526 Test Method for Using Calorimeters for Total DoseMeasurements in Pulsed Linear Accelerator or FlashX-ray Machines2.2 ISO/ASTM Standard:251275 Practice for Use of a Radiochromic Film DosimetrySystem3.Terminology3.1 Definitions:3.1.1 burnout failure level t
7、esta test performed to deter-mine the maximum dose-rate level the device survives and theminmum dose-rate level where the device experiences burnout.3.1.1.1 DiscussionIn such a test,semiconductor devicesare exposed to a series of irradiations of increasing dose-ratelevels.The maximum dose rate at wh
8、ich the device survives isdetermined for worst-case bias conditions.The burnout failurelevel test is always a destructive test.3.1.2 dose ratethe amount of energy absorbed per unitmass of a material per unit time during exposure to theradiation field(typically,expressed in units of Gy(material)/s).F
9、or pulsed radiation sources,dose rate typically refers to thepeak dose rate during the pulse.3.1.3 dose rate induced latchupregenerative device actionin which a parasitic region(for example,a four(4)layerp-n-p-n or n-p-n-p path)is turned on by the photocurrentgenerated by a pulse of ionizing radiati
10、on,and remains on foran indefinite period of time after the photocurrent subsides.The device will remain latched as long as the power supplydelivers voltage greater than the holding voltage and currentgreater than the holding current.Latchup disrupts normalcircuit operation in some portion of the ci
11、rcuit,and may alsocause catastrophic failure due to local heating of semiconduc-tor regions,metallization or bond wires.3.1.4 failure conditiona device is considered to haveundergone burnout failure if the device experiences one of thefollowing conditions.(1)functional failurea device failure where
12、the device undertest,(DUT)fails functional tests following exposure.(2)parametric failurea device failure where the deviceunder test,(DUT)fails parametric measurements after expo-sure.3.1.4.1 DiscussionFunctional or parametric failures maybe caused by total ionizing dose mechanisms.See interferences
13、for additional discussion.3.1.5 high dose-rate burnoutpermanent damage to a semi-conductor device caused by abnormally large currents flowingin junctions and resulting in a discontinuity in the normalcurrent flow in the device.3.1.5.1 DiscussionThis effect strongly depends on themode of operation an
14、d bias conditions.Temperature may also1This guide is under the jurisdiction of Committee F01on Electronics,and is thedirect responsibility of Subcommittee F01.11 on Nuclear and Space RadiationEffects.Current edition approved Jan.1,2011.Published January 2011.Originallyapproved in 1998.Last previous
15、edition approved in 2003 as F1893-98(2003).DOI:10.1520/F1893-11.2For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.Co
16、pyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 be a factor in damage to the device should latchup occur priorto failure.Latchup is known to be temperature dependent.3.1.6 ionizing dose rate responsethe transient changeswhich occur in the operating parameters or in the output signalof an operating device when exposed to an ionizing radiationpulse.See Terminology E170 for a definition of ionization.Within this standard,the scope of the d
